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| ON Semiconductort One Watt High Current Transistors PNP Silicon w These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range MPSW51 MPSW51A MPSW51 MPSW51A Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -30 -40 -40 -50 -5.0 -1000 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C MPSW51 MPSW51A* *ON Semiconductor Preferred Device MAXIMUM RATINGS 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO-226AE) COLLECTOR 3 2 BASE 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -40 Vdc, IE = 0) Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. MPSW51 MPSW51A MPSW51 MPSW51A V(BR)CEO Vdc -30 -40 -40 -50 -5.0 -- -- Vdc -- -- -- Vdc Adc V(BR)CBO V(BR)EBO ICBO MPSW51 MPSW51A -- -- -- -0.1 -0.1 -0.1 IEBO Adc (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 3 1 Publication Order Number: MPSW51/D MPSW51 MPSW51A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) (IC = -1000 mAdc, VCE = -1.0 Vdc) Collector -Emitter Saturation Voltage (IC = -1000 mAdc, IB = -100 mAdc) Base -Emitter On Voltage (IC = -1000 mAdc, VCE = -1.0 Vdc) hFE -- 55 60 50 -- -- -- -- -- -0.7 -1.2 Vdc Vdc VCE(sat) VBE(on) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -50 mAdc, VCE = -10 Vdc, f = 20 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 50 -- -- 30 MHz pF 200 VCE , COLLECTOR VOLTAGE (VOLTS) -1.0 -0.8 -0.6 -0.4 -0.2 TJ = 25C 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) IC = -10 mA IC = -50 mA IC = IC = IC = IC = -100 -250 -500 mA -1000 mA mA mA h FE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25C 20 -10 -20 -50 -100 -200 -500 -1000 -50 -100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region TJ = 25C -0.8 V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 VBE(SAT) @ IC/IB = 10 qV B, TEMPERATURE COEFFICIENT (mV/ C) -1.0 -0.8 -1.2 -1.6 qVB for VBE VBE(ON) @ VCE = -1.0 V -2.0 -2.4 -2.8 -1.0 -2.0 VCE(SAT) @ IC/IB = 10 -5.0 -10 -20 -50 -100 -200 0 -1.0 -2.0 -500 -1000 -5.0 -10 -20 -50 -100 -200 -500 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. "ON" Voltages Figure 4. Temperature Coefficient http://onsemi.com 2 MPSW51 MPSW51A f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 160 TJ = 25C 120 100 70 50 30 -10 VCE = -10 V TJ = 25C f = 20 MHz 80 Cibo 40 Cobo -20 -50 -100 -200 -500 -1000 0 IC, COLLECTOR CURRENT (mA) Cobo Cibo -5.0 -1.0 -20 -10 -15 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) -25 -5.0 Figure 5. Current Gain -- Bandwidth Product Figure 6. Capacitance -1.0 k I C , COLLECTOR CURRENT (mA) -500 -200 -100 -50 -20 -10 -1.0 -2.0 TA = 25C TC = 25C 1.0 ms 1.0 ms 100 ms DUTY CYCLE 10% MPSW51 MPSW51A CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -20 -30 -40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region -- Safe Operating Area http://onsemi.com 3 MPSW51 MPSW51A PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-10 ISSUE AL A B P F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 --- R L K XX G H R 123 D J SECTION X-X NC N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 MPSW51/D |
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